产品介绍
Product classification
产品介绍
TX60N900MT3

Description

Silicon Carbide (SiC) MOSFET use a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size.


Features

● High Speed Switching with Low Capacitances

  High Blocking Voltage with Low RDS(on)

  Simple to drive with Standard GateDrive

  100% avalanche tested

  Maximum junction temperature of150°C

   ROHSCompliant

Application

  EVCharging

  DC‐ACInverters

High Voltage DC/DCConverters

Switch Mode PowerSupplies

 Power Factor CorrectionModules

  MotorDrives

Ordering Information

Part Number

Marking

Package

Packaging

TX60N900MT3

TX60N900MT3

TO‐247

Tube

Absolute Maximum Ratings(Tc=25℃)


Symbol

Parameter

Value

Unit

VDS

Drain-Source Voltage

900

V

ID

Drain Current(continuous)at Tc=25℃

60

A

ID

Drain Current(continuous)at Tc=100℃

40

A

IDM

Drain Current (pulsed)

200

A

VGS

Gate-Source Voltage

-10/+20

V

PD

Power Dissipation TC= 25°C

208

W

TJ,Tstg

Junction and Storage Temperature Range

-55 to +150

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit


BVDS

Drain-source        Breakdown

Voltage


ID=250uA,VGS=0V


900




V


IDSS

Zero Gate Voltage Drain

Current

VDS=900V, VGS=0V,

TJ=25°C




100


uA

IGSS

Gate-body Leakage Current

VDS=0V ; VGS=10 to 20V



250

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS,ID=5mA

2


4

V


RDS(on)

Static       Drain-source     On

Resistance


VGS=18V, ID=30A



38


48


m?

RG

Gate Resistance

VGS=0V,f=1MHz


3


W


Electrical Characteristics(TJ= 25℃unless otherwise specified) Typical Performance‐Static

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit


BVDS

Drain-source        Breakdown

Voltage


ID=250uA,VGS=0V


900




V


IDSS

Zero Gate Voltage Drain

Current

VDS=900V, VGS=0V,

TJ=25°C




100


uA

IGSS

Gate-body Leakage Current

VDS=0V ; VGS=10 to 20V



250

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS,ID=5mA

2


4

V


RDS(on)

Static       Drain-source     On

Resistance


VGS=18V, ID=30A



38


48


m?

RG

Gate Resistance

VGS=0V,f=1MHz


3


W

Typical Performance‐Dynamic


Ciss

Input Capacitance


VDS=600V,f=1000KHZ,VGS=0V


1668


pF

Coss

Output Capacitance


92


pF

Crss

Reverse Transfer Capacitance


11


pF

Qg

Total Gate Charge

VDS=600V,ID=30A,VGS=0~20V


85


nC

Qgs

Gate-source Charge


20


nC

Qgd

Gate-Drain Charge


25


nC

td(on)

Turn-on Delay Time


VDD=600V,ID=30A,VGS=-0V~20V,RG=0?,


19


ns

tr

Rise Time


23


ns

td(off)

Turn-off Delay Time


35


ns

tf

Fall Time


21


ns

Typical Performance‐Reverse Diode


Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit


VFSD


Forward Voltage

VGS=0V,IF=30A,TJ=25°C

2


5

V

VGS=0V,IF=30A,TJ=150°C

2


5

V

trr

Reverse Recovery Time


VGS=0 V, IF=30 A, VR=600 V,

di/dt=100 A/μs


31


ns

Qrr

Reverse Recovery Charge


242


nC


Irrm

Peak Reverse Recovery

Current



18



A


Thermal Characteristics

Symbol

Parameter

Value.

Unit

RqJC

Thermal Resistance, Junction-to-Case

0.6

°C/W

RqJA

Thermal Resistance, Junction-to-Case

40

°C/W


The values are based on the junction-to case thermal impedance which is measured with the device mounted to a large heat sink assuming maximum junction temperature of Tj(max)=150℃

Package Drawing:

Dimensions(UNIT:mm)


SYMBDLS

DIMENSIONS IN MILLIMETERS

DIMENSIONS IN INCHES

MIN

NOM

MAX

MIN

NOM

MAX

A

4.90

5.00

5.10

0.193

0.197

0.201

A1

2.31

2.42

2.52

0.091

0.095

0.099

A2

1.90

2.00

2.10

0.075

0.079

0.083

b

1.16

1.22

1.27

0.046

0.048

0.050

b1

1.96

2.02

2.07

0.078

0.080

0.081

b2

2.00

2.10

2.20

0.079

0.083

0.087

b3

2.96

3.02

3.07

0.117

0.119

0.121

b4

3.00

3.10

3.20

0.118

0.122

0.126

C

0.59

0.62

0.66

0.023

0.024

0.026

D

20.90

21.00

21.10

0.823

0.827

0.831

D1

16.25

16.55

16.85

0.640

0.652

0.663

D2

5.00 TYP

0.197 TYP

D3

1.05

1.20

1.35

0.041

0.047

0.053

e

5.44 BSC


0.214 BSC


E

15.70

15.80

15.90

0.618

0.622

0.626

E1

13.06

13.26

13.50

0.514

0.522

0.530

E2

2.50 TYP


0.098 TYP


L

19.72

19.92

20.12

0.776

0.784

0.792

L1

——

——

4.30

——

——

0.169

Q

6.15 BSC

0.242BSC

Q1

5.60

5.80

6.00

0.220

0.228

0.236

?P

3.55

3.60

3.70

0.140

0.142

0.146









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